Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

Page 43/51

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NE46134-T1-QS-AZ	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89	In Stock454 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5.5GHz	Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz	Gain: 7dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V	Current - Collector (Ic) (Max): 250mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89
NE461M02-T1-QR-AZ	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V	In Stock441 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz	Gain: 8.3dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V	Current - Collector (Ic) (Max): 250mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: -
NE461M02-T1-QS-AZ	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V SOT89	In Stock331 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz	Gain: 8.3dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V	Current - Collector (Ic) (Max): 250mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89
NE68130-T1-R34-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ SOT323	In Stock272 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1.4dB @ 1GHz	Gain: 9dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
NE85634-T1-RF-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89	In Stock500 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 6.5GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1GHz	Gain: 9dB	Power - Max: 1.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89
NE85639-T1-R27-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 9GHZ SOT143	In Stock339 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 9GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1GHz	Gain: 13dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-253-4, TO-253AA	Supplier Device Package: SOT-143
NE85639-T1-R28-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 9GHZ SOT143	In Stock255 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 9GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1GHz	Gain: 13dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-253-4, TO-253AA	Supplier Device Package: SOT-143
MRF4427	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8SO	In Stock462 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF4427G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8SO	In Stock280 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF4427GR1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8SO	In Stock434 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF4427GR2	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8SO	In Stock303 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF4427R1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8DBGA	In Stock321 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-dBGA (2x1.5)
MRF4427R2	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 8SO	In Stock408 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF553	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 175MHZ	In Stock498 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 175MHz	Noise Figure (dB Typ @ f): -	Gain: 11.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
MRF553GT	Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO	In Stock413 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 175MHz	Noise Figure (dB Typ @ f): -	Gain: 11.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Power Macro	Supplier Device Package: Power Macro
MRF553T	Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO	In Stock425 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 175MHz	Noise Figure (dB Typ @ f): -	Gain: 11.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Power Macro	Supplier Device Package: Power Macro
MRF555G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 470MHZ	In Stock345 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 470MHz	Noise Figure (dB Typ @ f): -	Gain: 12.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
MRF555GT	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 470MHZ	In Stock354 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 470MHz	Noise Figure (dB Typ @ f): -	Gain: 12.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
MRF559	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ MACRO X	In Stock139 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Macro-X	Supplier Device Package: Macro-X
MRF559GT	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ	In Stock307 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
MRF559T	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ	In Stock107 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
MRF5812	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SOIC	In Stock378 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
MRF5812G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO	In Stock215 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF5812R1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO	In Stock364 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock271 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock388 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372GR1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock469 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372GR2	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock349 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372R1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock161 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF8372R2	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO	In Stock264 More on Order	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 9.5dB	Power - Max: 2.2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO

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