Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
MUN5316DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock7,237 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5336DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PMP BRT SC70-6	In Stock24,974 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100kOhms	Resistor - Emitter Base (R2): 100kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5311DW1T2G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock17,059 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5115DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock7,621 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5335DW1T2G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.25W SC88	In Stock8,152 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
PRMD10Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD10/SOT1268/DFN1412-6	In Stock7,710 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMD12Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD12/SOT1268/DFN1412-6	In Stock8,832 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMD13Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD13/SOT1268/DFN1412-6	In Stock7,571 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMD16Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD16/SOT1268/DFN1412-6	In Stock7,499 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMD3Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD3/SOT1268/DFN1412-6	In Stock7,661 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMH10Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMH10/SOT1268/DFN1412-6	In Stock8,597 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMH2Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMH2/SOT1268/DFN1412-6	In Stock6,639 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
PRMH9Z	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMH9/SOT1268/DFN1412-6	In Stock8,898 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 480mW	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1412-6
MUN5116DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock15,163 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
NSTB60BDW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.25W SC88	In Stock4,834 More on Order	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 140MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
RN2601(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6	In Stock3,950 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
MUN5315DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock7,959 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
UMC3NT1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W SC70	In Stock24,767 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: 5-TSSOP, SC-70-5, SOT-353	Supplier Device Package: SC-88A (SC-70-5/SOT-353)
EMH25FHAT2R	Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN 100MA EMT6	In Stock23,505 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: EMT6
EMH10FHAT2R	Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased NPN+NPN DIGITAL TRANSISTOR (CORR	In Stock13,764 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: EMT6
RN1605TE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6	In Stock4,008 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
RN1971TE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6	In Stock4,071 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
NSBC144EDXV6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.5W SOT563	In Stock4,973 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
RN2903FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock5,688 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2908FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock4,886 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2909FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock5,587 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1606(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6	In Stock4,521 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
PEMD16,115	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666	In Stock5,653 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
PEMB10,115	Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666	In Stock5,543 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
RN1901FETE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock5,100 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6

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