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| Part Number | TPC8213-H(TE12LQ,M |
| OEMstron Part # | TPC8213-H-TE12LQ-M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 60V 5A SOP8 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPC8213-H(TE12LQ,M PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPC8213-H(TE12LQ Specifications
| Part Number | TPC8213-H(TE12LQ,M | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 5A | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V | |
| Power - Max | 450mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-SOP (5.5x6.0) |
TPC8213-H(TE12LQ,M Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
TPC8213-H(TE12LQ,M D# TPC8213-H(TE12LQ,M-ND Toshiba America Electronic Components |
MOSFET 2N-CH 60V 5A SOP8 |
Limited Supply - Call |
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