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| Part Number | SSM6N35AFE,LF |
| OEMstron Part # | SSM6N35AFE-LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2 N-CHANNEL 20V 250MA ES6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM6N35AFE,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SSM6N35AFE Specifications
| Part Number | SSM6N35AFE,LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate, 1.2V Drive | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 10V | |
| Power - Max | 250mW | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 |
SSM6N35AFE,LF Documents
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