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| Part Number | SQS966ENW-T1_GE3 |
| OEMstron Part # | SQS966ENW-T1_GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET N-CHAN 60V |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SQS966ENW-T1_GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SQS966ENW-T1_GE3 Specifications
| Part Number | SQS966ENW-T1_GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V | |
| Power - Max | 27.8W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | PowerPAK® 1212-8W Dual | |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
SQS966ENW-T1_GE3 Documents
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