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SIZ998DT-T1-GE3

SIZ998DT-T1-GE3
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Part Number SIZ998DT-T1-GE3
OEMstron Part # SIZ998DT-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2 N-CH 30V 8-POWERPAIR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIZ998DT-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIZ998DT-T1-GE3 Specifications

Part Number SIZ998DT-T1-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type 2 N-Channel (Dual), Schottky
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V, 2620pF @ 15V
Power - Max 20.2W, 32.9W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair®

SIZ998DT-T1-GE3 Documents

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