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For Reference Only
| Part Number | SI7980DP-T1-E3 |
| OEMstron Part # | SI7980DP-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 20V 8A PPAK SO-8 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI7980DP-T1-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI7980DP-T1-E3 Specifications
| Part Number | SI7980DP-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 8A | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V | |
| Power - Max | 19.8W, 21.9W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SO-8 Dual | |
| Supplier Device Package | PowerPAK® SO-8 Dual |
SI7980DP-T1-E3 Documents
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SI7980DP-T1-E3 Vishay Siliconix |
MOSFET 2N-CH 20V 8A PPAK SO-8 |
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| Part Number | Description | Stock |
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SI7980DP-T1-E3 D# SI7980DP-T1-E3-ND Vishay Siliconix |
MOSFET 2N-CH 20V 8A PPAK SO-8 |
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