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| Part Number | RN4990(T5L,F,T) |
| OEMstron Part # | RN4990-T5L-F-T |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
| Description | TRANS NPN/PNP PREBIAS 0.2W US6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN4990(T5L,F,T) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN4990(T5L Specifications
| Part Number | RN4990(T5L,F,T) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 100µA (ICBO) | |
| Frequency - Transition | 250MHz, 200MHz | |
| Power - Max | 200mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
RN4990(T5L,F,T) Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
RN4990(T5L,F,T) D# RN4990(T5LFT)TR-ND Toshiba America Electronic Components |
TRANS NPN/PNP PREBIAS 0.2W US6 |
3000 In Stock |
| Part Number | Description | Stock |
|
RN4990T5LFT "TOSHIBA SEMICONDUCTOR AND" |
OEM/CM QUOTES ONLY | NO BROKERS |
3600 |
| Part Number | Description | Stock |
|
RN4990T5LFT Toshiba America Electronic Components |
OEM/CM ONLY |
3095 |
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