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For Reference Only
| Part Number | RN1116,LF(CT |
| OEMstron Part # | RN1116-LF-CT |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
| Description | TRANSISTOR NPN BRT Q1BSR4.7KOHM |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1116,LF(CT PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN1116 Specifications
| Part Number | RN1116,LF(CT | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | * | |
| Transistor Type | - | |
| Current - Collector (Ic) (Max) | - | |
| Voltage - Collector Emitter Breakdown (Max) | - | |
| Resistor - Base (R1) | - | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Vce Saturation (Max) @ Ib, Ic | - | |
| Current - Collector Cutoff (Max) | - | |
| Frequency - Transition | - | |
| Power - Max | - | |
| Mounting Type | - | |
| Package / Case | - | |
| Supplier Device Package | - |
RN1116,LF(CT Documents
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