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RN1102MFV,L3F

RN1102MFV,L3F
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Part Number RN1102MFV,L3F
OEMstron Part # RN1102MFV-L3F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 50V 0.15W VESM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1102MFV,L3F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RN1102MFV Specifications

Part Number RN1102MFV,L3F
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM

RN1102MFV,L3F Documents

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Part Number Description Stock

RN1102MFV,L3F

D# V72:2272_13893397

Toshiba America Electronic Components

Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R

RoHS: Compliant
Americas - 101
Part Number Description Stock

RN1102MFV,L3F

D# RN1102MFV,L3F

Toshiba America Electronic Components

Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1102MFV,L3F)

RoHS: Compliant
Americas - 0
Part Number Description Stock

RN1102MFV,L3F(B

D# C1S751201032520

Toshiba America Electronic Components

Bipolar Transistor (BJT)

Min Qty: 50
Container: Cut Tape
33870

RN1102MFV,L3F(CT

D# C1S751201248051

Toshiba America Electronic Components

Pre-Biased Bipolar Transistor

RoHS: Not Compliant
pbFree: No
Min Qty: 50
Container: Cut Tape
55706

RN1102MFV,L3F

D# C1S751201139355

Toshiba America Electronic Components

Bipolar Transistor (BJT)

Min Qty: 50
Container: Cut Tape
7025
Part Number Description Stock

RN1102MFV,L3F

D# RN1102MFVL3FCT-ND

Toshiba America Electronic Components

TRANS PREBIAS NPN 50V 0.1A VESM

31315 In Stock
Part Number Description Stock

RN1102MFVL3FT

Toshiba America Electronic Components

OEM/CM QUOTES ONLY | NO BROKERS

7903

RN1102MFVL3F

"TOSHIBA PARTNER"

OEM/CM QUOTES ONLY | NO BROKERS

12000
Part Number Description Stock

RN1102MFV,L3F

D# 757-RN1102MFVL3F

Toshiba America Electronic Components

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

RoHS: Compliant
5884
Part Number Description Stock

RN1102MFVL3FT

Toshiba America Electronic Components

OEM/CM ONLY

6602

RN1102MFVL3F

Toshiba America Electronic Components

OEM/CM ONLY

10016
Part Number Description Stock

RN1102MFV,L3F

Toshiba America Electronic Components

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

pbFree: Pb-Free
Americas - 0

RN1102MFVL3F

Toshiba America Electronic Components

Bipolar Transistors - Pre-Biased TRANS

pbFree: Pb-Free
Americas - 0
Part Number Description Stock

RN1102MFV,L3F(B

D# 50261155

Toshiba America Electronic Components

Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R

RoHS: Compliant
Americas - 33870

RN1102MFV,L3F(CT

D# 53464083

Toshiba America Electronic Components

RN1102MFV,L3F(CT

Americas - 55706

RN1102MFV,L3F

D# 43711012

Toshiba America Electronic Components

Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R

RoHS: Compliant
Americas - 7025

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