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| Part Number | NSB8MTHE3_A/I |
| OEMstron Part # | NSB8MTHE3_A-I |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Description | DIODE GEN PURP 1KV 8A TO263AB |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | NSB8MTHE3_A/I PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
NSB8MTHE3_A/I Specifications
| Part Number | NSB8MTHE3_A/I | |
| Brand | Vishay Semiconductor Diodes Division | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Diodes & Rectifiers | |
| Subcategory | Rectifiers - Single | |
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | Automotive, AEC-Q101 | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Current - Average Rectified (Io) | 8A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V | |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | TO-263AB | |
| Operating Temperature - Junction | -55°C ~ 150°C |
NSB8MTHE3_A/I Documents
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| Part Number | Description | Stock |
|
NSB8MTHE3_A/I D# NSB8MTHE3_A/I-ND Vishay Semiconductors |
DIODE GEN PURP 1KV 8A TO263AB |
Temporarily Out of Stock |
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| Minimum | 1 |
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