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| Part Number | MT3S111TU,LF |
| OEMstron Part # | MT3S111TU-LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - RF |
| Description | RF SIGE NPN BIPOLAR TRANSISTOR N |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | MT3S111TU,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
MT3S111TU Specifications
| Part Number | MT3S111TU,LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - RF | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 6V | |
| Frequency - Transition | 10GHz | |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz | |
| Gain | 12.5dB | |
| Power - Max | 800mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V | |
| Current - Collector (Ic) (Max) | 100mA | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, Flat Leads | |
| Supplier Device Package | UFM |
MT3S111TU,LF Documents
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