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| Part Number | IRFHM8363TR2PBF |
| OEMstron Part # | IRFHM8363TR2PBF |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 30V 11A 8PQFN |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRFHM8363TR2PBF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRFHM8363TR2PBF Specifications
| Part Number | IRFHM8363TR2PBF | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 11A | |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V | |
| Power - Max | 2.7W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
IRFHM8363TR2PBF Documents
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