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| Part Number | IRF7341QTRPBF |
| OEMstron Part # | IRF7341QTRPBF |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 55V 5.1A 8-SOIC |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRF7341QTRPBF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRF7341QTRPBF Specifications
| Part Number | IRF7341QTRPBF | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V | |
| Power - Max | 2.4W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
IRF7341QTRPBF Documents
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