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For Reference Only
| Part Number | IPG20N10S4L22AATMA1 |
| OEMstron Part # | IPG20N10S4L22AATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 100V 20A TDSON-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPG20N10S4L22AATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPG20N10S4L22AATMA1 Specifications
| Part Number | IPG20N10S4L22AATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 25µA | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V | |
| Power - Max | 60W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-10 |
IPG20N10S4L22AATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# V72:2272_06384282 Infineon Technologies AG |
Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R |
Americas - 43 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# 13AC9058 Infineon Technologies AG |
Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC9058) RoHS: Compliant
|
Americas - 1093 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# SP001091984 Infineon Technologies AG |
Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin TDSON T/R (Alt: SP001091984) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# C1S322000705195 Infineon Technologies AG |
MOSFET RoHS: Compliant
pbFree: Yes
Min Qty: 1
Container: Cut Tape
|
4973 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# IPG20N10S4L22AATMA1CT-ND Infineon Technologies AG |
MOSFET 2N-CH 100V 20A TDSON-8 |
3162 In Stock |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# 2725856RL Infineon Technologies AG |
MOSFET, AEC-Q101, DUAL N-CH, TDSON-8 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 INFINEON TECHNOLOGIES |
OEM/CM QUOTES ONLY | NO BROKERS |
23200 |
| Part Number | Description | Stock |
|
IPG20N10S4L-22A D# 726-IPG20N10S4L-22A Infineon Technologies AG |
MOSFET MOSFET_(75V 120V( RoHS: Compliant
|
2915 |
|
IPG20N10S4L22AATMA1 D# 726-20N10S4L22AATMA1 Infineon Technologies AG |
MOSFET MOSFET_(75V 120V( RoHS: Compliant
|
2459 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# 13AC9058 Infineon Technologies AG |
MOSFET, N-CH, 100V, 20A, 175DEG C, 60W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:20A, On Resistance Rds(on):0.02ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1093 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# 45122551 Infineon Technologies AG |
Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R |
Americas - 4973 |
| Part Number | Description | Stock |
|
IPG20N10S4L22AATMA1 D# 2725856 Infineon Technologies AG |
MOSFET, AEC-Q101, DUAL N-CH, TDSON-8 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1820 |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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