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| Part Number | IPG20N06S4L14ATMA1 |
| OEMstron Part # | IPG20N06S4L14ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 8TDSON |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPG20N06S4L14ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPG20N06S4L14ATMA1 Specifications
| Part Number | IPG20N06S4L14ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 25V | |
| Power - Max | 50W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-4 |
IPG20N06S4L14ATMA1 Documents
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| Part Number | Description | Stock |
|
IPG20N06S4L14ATMA1 D# IPG20N06S4L14ATMA1-ND Infineon Technologies AG |
MOSFET 2N-CH 8TDSON |
Limited Supply - Call |
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| In Stock | 163 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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