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For Reference Only
| Part Number | IGB03N120H2ATMA1 |
| OEMstron Part # | IGB03N120H2ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › IGBTs - Single |
| Description | IGBT 1200V 9.6A 62.5W TO263-3 |
| Lifecycle | Not For New Designs |
| RoHS | No RoHS Information |
| EDA/CAD Models | IGB03N120H2ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IGB03N120H2ATMA1 Specifications
| Part Number | IGB03N120H2ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Not For New Designs | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | IGBTs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 9.6A | |
| Current - Collector Pulsed (Icm) | 9.9A | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A | |
| Power - Max | 62.5W | |
| Switching Energy | 290µJ | |
| Input Type | Standard | |
| Gate Charge | 22nC | |
| Td (on/off) @ 25°C | 9.2ns/281ns | |
| Test Condition | 800V, 3A, 82Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263-3 |
IGB03N120H2ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IGB03N120H2ATMA1 D# E02:0323_00275588 Infineon Technologies AG |
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(2+Tab) D2PAK T/R |
Europe - 1000 |
| Part Number | Description | Stock |
|
IGB03N120H2XT D# IGB03N120H2ATMA1 Infineon Technologies AG |
Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB03N120H2ATMA1) |
Americas - 0 |
| Part Number | Description | Stock |
|
IGB03N120H2ATMA1 D# IGB03N120H2ATMA1TR-ND Infineon Technologies AG |
IGBT 1200V 9.6A 62.5W TO263-3 |
Limited Supply - Call |
|
IGB03N120H2ATMA1616 D# 2156-IGB03N120H2ATMA1616-ND Rochester Electronics LLC |
POWER BIPOLAR TRANSISTOR |
Temporarily Out of Stock |
| Part Number | Description | Stock |
|
IGB03N120H2 D# 726-IGB03N120H2 Infineon Technologies AG |
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A RoHS: Compliant
|
306 |
| Part Number | Description | Stock |
|
IGB03N120H2ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
8016 |
| Part Number | Description | Stock |
|
IGB03N120H2ATMA1 D# 53391593 Infineon Technologies AG |
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(2+Tab) D2PAK T/R |
Americas - 1000 |
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| In Stock | 292 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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