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HN4A06J(TE85L,F)

HN4A06J(TE85L,F)
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Part Number HN4A06J(TE85L,F)
OEMstron Part # HN4A06J-TE85L-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays
Description TRANS 2PNP 120V 0.1A SMV
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models HN4A06J(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN4A06J(TE85L Specifications

Part Number HN4A06J(TE85L,F)
Brand Toshiba Semiconductor and Storage
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV

HN4A06J(TE85L,F) Documents

HN4A06J(TE85L, HN4A06J(TE85L Datasheet (Total Pages: 4, Size: 308.25 KB)
HN4A06J(TE85L Datasheet CoverHN4A06J(TE85L Datasheet Page 2HN4A06J(TE85L Datasheet Page 3HN4A06J(TE85L Datasheet Page 4
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