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| Part Number | HN1B01F-GR(TE85L,F |
| OEMstron Part # | HN1B01F-GR-TE85L-F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays |
| Description | TRANS NPN/PNP 50V 0.15A SM6 |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | HN1B01F-GR(TE85L,F PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
HN1B01F-GR(TE85L Specifications
| Part Number | HN1B01F-GR(TE85L,F | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Arrays | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN, PNP | |
| Current - Collector (Ic) (Max) | 150mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
| Power - Max | 300mW | |
| Frequency - Transition | 120MHz | |
| Operating Temperature | 125°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Supplier Device Package | SM6 |
HN1B01F-GR(TE85L,F Documents
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| In Stock | 282 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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