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| Part Number | GT8G133(TE12L,Q) |
| OEMstron Part # | GT8G133-TE12L-Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › IGBTs - Single |
| Description | IGBT 400V 600MW 8TSSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | GT8G133(TE12L,Q) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
GT8G133(TE12L Specifications
| Part Number | GT8G133(TE12L,Q) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | IGBTs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 400V | |
| Current - Collector (Ic) (Max) | - | |
| Current - Collector Pulsed (Icm) | 150A | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 4V, 150A | |
| Power - Max | 600mW | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 1.7µs/2µs | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-TSSOP |
GT8G133(TE12L,Q) Documents
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| Part Number | Description | Stock |
|
GT8G133(TE12L,Q) D# GT8G133(TE12L,Q)-ND Toshiba America Electronic Components |
IGBT 400V 600MW 8TSSOP |
Limited Supply - Call |
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