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GT60N321(Q)

GT60N321(Q)
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For Reference Only

Part Number GT60N321(Q)
OEMstron Part # GT60N321-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT 1000V 60A 170W TO3P LH
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GT60N321(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GT60N321(Q) Specifications

Part Number GT60N321(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 170W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 330ns/700ns
Test Condition -
Reverse Recovery Time (trr) 2.5µs
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)

GT60N321(Q) Documents

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Part Number Description Stock

GT60N321(Q)

Toshiba America Electronic Components

IGBT

39
Part Number Description Stock

GT60N321(Q)

D# GT60N321(Q)-ND

Toshiba America Electronic Components

IGBT 1000V 60A 170W TO3P LH

Limited Supply - Call
Part Number Description Stock

GT60N321Q

Toshiba America Electronic Components

OEM/CM QUOTES ONLY | NO BROKERS

36
Part Number Description Stock

GT60N321(Q)

D# NS-GT60N321(Q)

Toshiba America Electronic Components

OEM/CM ONLY

9973
Part Number Description Stock

GT60N321Q

Toshiba America Electronic Components

OEM/CM ONLY

47

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