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For Reference Only
| Part Number | FF23MR12W1M1B11BOMA1 |
| OEMstron Part # | FF23MR12W1M1B11BOMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2 N-CH 1200V 50A MODULE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | FF23MR12W1M1B11BOMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
FF23MR12W1M1B11BOMA1 Specifications
| Part Number | FF23MR12W1M1B11BOMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | CoolSiC™+ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 50A | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V | |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA | |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V | |
| Power - Max | 20mW | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
FF23MR12W1M1B11BOMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# E02:0323_11639611 Infineon Technologies AG |
Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray |
Europe - 24 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# FF23MR12W1M1B11BOMA1 Infineon Technologies AG |
IGBTs - Bulk (Alt: FF23MR12W1M1B11BOMA1) RoHS: Compliant
|
Americas - 336 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# SP001602224 Infineon Technologies AG |
IGBTs (Alt: SP001602224) |
Europe - 0 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# FF23MR12W1M1B11BOMA1-ND Infineon Technologies AG |
MOSFET 2 N-CH 1200V 50A MODULE |
106 In Stock |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# 2771413 Infineon Technologies AG |
MOSFET MODULE, N-CH, 1.2KV, 50A RoHS: Compliant
Min Qty: 1
Container: Each
|
16 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 Infineon Technologies AG |
N-Channel 1200 V 23 mOhm CoolSiC EasyDual PressFIT/NTC Mosfet Module RoHS: Compliant
pbFree: Yes
|
0 Tray |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
153 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# 726-FF23MR12W1M1B11 Infineon Technologies AG |
Discrete Semiconductor Modules LOW POWER EASY RoHS: Compliant
|
80 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# 24AC8570 Infineon Technologies AG |
MOSFET MODULE, N-CH, 1.2KV, 50A, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:1.2kV, On Resistance Rds(on):0.023ohm, Rds(on) Test Voltage Vgs:-, Threshold Voltage Vgs:4.5V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Bulk
|
16 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 Infineon Technologies AG |
LOW POWER EASY RoHS: Compliant
|
304 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 Infineon Technologies AG |
OEM/CM ONLY |
182 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# 53811056 Infineon Technologies AG |
Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray |
Americas - 24 |
| Part Number | Description | Stock |
|
FF23MR12W1M1B11BOMA1 D# 2771413 Infineon Technologies AG |
MOSFET MODULE, N-CH, 1.2KV, 50A RoHS: Compliant
Min Qty: 1
Container: Each
|
22 |
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