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| Part Number | EPC2110ENGRT |
| OEMstron Part # | EPC2110ENGRT |
| Manufacturer | EPC |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | GAN TRANS 2N-CH 120V BUMPED DIE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2110ENGRT PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
EPC2110ENGRT Specifications
| Part Number | EPC2110ENGRT | |
| Brand | EPC | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 120V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
EPC2110ENGRT Documents
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| Part Number | Description | Stock |
|
EPC2110ENGRT D# 917-EPC2110ENGRTR-ND Efficient Power Conversion |
GAN TRANS 2N-CH 120V BUMPED DIE |
Temporarily Out of Stock |
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| In Stock | 15,478 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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