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For Reference Only
| Part Number | EPC2107ENGRT |
| OEMstron Part # | EPC2107ENGRT |
| Manufacturer | EPC |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | GAN TRANS 3N-CH 100V BUMPED DIE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2107ENGRT PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
EPC2107ENGRT Specifications
| Part Number | EPC2107ENGRT | |
| Brand | EPC | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA | |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 9-VFBGA | |
| Supplier Device Package | 9-BGA (1.35x1.35) |
EPC2107ENGRT Documents
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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