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| Part Number | ALD1110EPAL |
| OEMstron Part # | ALD1110EPAL |
| Manufacturer | Advanced Linear Devices Inc. |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 10V 8DIP |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | ALD1110EPAL PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
ALD1110EPAL Specifications
| Part Number | ALD1110EPAL | |
| Brand | Advanced Linear Devices Inc. | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Advanced Linear Devices Inc. | |
| Series | EPAD® | |
| FET Type | 2 N-Channel (Dual) Matched Pair | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 10V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 5V | |
| Vgs(th) (Max) @ Id | 1.01V @ 1µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V | |
| Power - Max | 600mW | |
| Operating Temperature | 0°C ~ 70°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 8-DIP (0.300", 7.62mm) | |
| Supplier Device Package | 8-PDIP |
ALD1110EPAL Documents
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| Part Number | Description | Stock |
|
ALD1110EPAL Advanced Linear Devices Inc |
MOSFET 2N-CH 10V 8DIP |
Contact Us |
| Part Number | Description | Stock |
|
ALD1110EPAL D# ALD1110EPAL-ND Advanced Linear Devices Inc |
MOSFET 2N-CH 10V 8DIP |
Temporarily Out of Stock |
| Part Number | Description | Stock |
|
ALD1110EPAL D# NS-ALD1110EPAL Multiple |
OEM/CM ONLY |
2640 |
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| In Stock | 139 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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