Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Total Parts | 30/51 |
| Manufacturers | Richtek Technology Corp., Fagor Electronica, Tak Cheong Semiconductor Co., Ltd., EIC Semiconductor, Inc., PanJIT Semiconductor, Taiwan Semiconductor Company, Ltd., Sanyo Electric Co. Ltd, Vishay Semiconductor GmbH, ON Semiconductor, Comchip Technology Corporation, Renessas (Hitachi and Mitsubishi) Ltd., Rohm Co., Ltd., Diodes Inc., NXP Semiconductors (Philips), Philips GmbH, Bourns, Inc., Matsuki Electronic Company, Leshan Radio Company, Ltd., TAITRON Components Incorporated, NEC Electronics Inc. (Nippon Electrical Company) |
| Functions | Silicon NPN Darlington Transistor, Silicon NPN Digital Transistor with Internal Diode, Zener Diode, Transient Voltage supressor, Silicon PNP Transistor, Voltage Detector Integrated Circuit |
| Cases | SOD-323FL, SOD-123F, SOT-23, SOT-89, SOD-323, DO-214AC, DO-215AA, SOD-123, SOD-123FL, PCP, DO-214AA, SSOP-3 |
| Pins | 1ba, 16df, 1d, 16dc, 5ba, 20tb, 16vdc, 7d, 5d |
| Description |
5.6V±2%, Izt=5mA, Zzt=40Ω, 375mW 33V±5%, Izt=2mA, Zzt=35Ω, 200mW Vrwm=64V, Irsm=5.8A, 600W(1ms), Bidir. 14.25..15.75V, Izt=0.05mA, 500mW 40.85..45.15V, Izt=10mA, 500mW 15V±5%, Izt=50µA, 500mW 14.3..15.8V, Izt=0.05mA, 500mW 43V±5%, Izt=50µA, 500mW Vbr=152..168V, Vrwm=136V, 1.9A, 400W(1ms) Vrwm=64V, Vbr=71.1..90.1V, 5.8A, 600W(1ms), Bidir. Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW Vrwm=440.0V, Vbr=492.0..543.0V, Ipp=0.56A, 400W(1ms) Vrwm=64.0V, Vbr=71.10..78.60V, Ipp=5.83A, 600W(1ms), Bidir. 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW 3.4V±1%, -Reset ODO, Td=400ms 3.6V±1%, -Reset PPO |
| SMD Code | A | Part Number | Manufacturer | Case | Pin | Description | |
|---|---|---|---|---|---|---|---|
| DM | - | BZT52H-B5V6 | Phi | SOD-123FL | 7d | Zener Diode 5.6V±2%, Izt=5mA, Zzt=40Ω, 375mW |
|
| DM | - | BZX384-C33 | Nxp | SOD-323 | 5d | Zener Diode 33V±5%, Izt=2mA, Zzt=35Ω, 200mW |
|
| DM | - | CD214B-T64CA | Brn | DO-214AA | 1ba | Transient Voltage supressor Vrwm=64V, Irsm=5.8A, 600W(1ms), Bidir. |
|
| DM | - | LMSZ4702T1G | Lrc | SOD-123 | 5d | Zener Diode 14.25..15.75V, Izt=0.05mA, 500mW |
|
| DM | - | MM1Z4717 | Eic | SOD-323FL | 7d | Zener Diode 40.85..45.15V, Izt=10mA, 500mW |
|
| DM | - | MMSZ4702 | Ons | SOD-123 | 5d | Zener Diode 15V±5%, Izt=50µA, 500mW |
|
| DM | - | MMSZ4702-F | Ttr | SOD-123F | 7d | Zener Diode 14.3..15.8V, Izt=0.05mA, 500mW |
|
| DM | - | MMSZ4717 | Eic | SOD-123 | 5d | Zener Diode 43V±5%, Izt=50µA, 500mW |
|
| DM | - | P4SMA160 | Fag | DO-214AC | 1d | Transient Voltage supressor Vbr=152..168V, Vrwm=136V, 1.9A, 400W(1ms) |
|
| DM | - | P6SMBJ64CA | Pjt | DO-214AA | 1ba | Transient Voltage supressor Vrwm=64V, Vbr=71.1..90.1V, 5.8A, 600W(1ms), Bidir. |
|
| DM | - | SMBG64CA | Vs | DO-215AA | 5ba | Transient Voltage supressor Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. |
|
| DM | - | SMBJ64CA | Di | DO-214AA | 1ba | Transient Voltage supressor Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. |
|
| DM | - | SMBJ64CA | Vs | DO-214AA | 1ba | Transient Voltage supressor Vrwm=64V, Vbr=71.1..81.8V, 5.8A, 600W(1ms), Bidir. |
|
| DM | - | TCUDZS24VB | Tac | SOD-323FL | 7d | Zener Diode 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW |
|
| DM | - | TV04A441J-G | Cmc | DO-214AC | 1d | Transient Voltage supressor Vrwm=440.0V, Vbr=492.0..543.0V, Ipp=0.56A, 400W(1ms) |
|
| DM | - | TV06B640JB-G | Cmc | DO-214AA | 1ba | Transient Voltage supressor Vrwm=64.0V, Vbr=71.10..78.60V, Ipp=5.83A, 600W(1ms), Bidir. |
|
| DM | - | UDZS24B | Tsc | SOD-323FL | 7d | Zener Diode 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW |
|
| DM | - | UDZS24VBW | Tac | SOD-123FL | 7d | Zener Diode 23.72..24.78V, Izt=5mA, Zzt=80Ω, 200mW |
|
| dM | - | BU45K344G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.4V±1%, -Reset ODO, Td=400ms |
|
| Dm | - | BD49K36G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.6V±1%, -Reset PPO |
|
| DM | - | AZ23C28 | Pjt | SOT-23 | 16df | Zener Diode Dual, 26.60..29.40V, Zzt=80Ω, Izt=5mA, 300mW |
|
| DM | - | MEZ03-28-T2 | Mts | SOT-23 | 16df | Zener Diode 26.60..29.40V, Izt=5mA, Zzt=80Ω, 300mW |
|
| DM | - | MMBZ4702 | Vs | SOT-23 | 16dc | Zener Diode 15V±5%, If=10mA, 350mW |
|
| DM | - | RT9809-36CV | Rct | SOT-23 | 16vdc | Voltage Detector Integrated Circuit 3.6V±2%, -Reset PPO |
|
| DM | - | SiP809CTEUADT | Vs | SOT-23 | 16vdc | Voltage Detector Integrated Circuit 3.08V±1.5%, -Reset PPO 1.5ms |
|
| DM | - | TZT28AW | Ttr | SOT-23 | 16df | Zener Diode Dual, 26.60..29.40V, Izt=5.0mA, 300mW |
|
| DM | - | 2SB1026-M | Ren | SOT-89 | 20tb | Silicon PNP Transistor AF, 120V, 1A, 1W, B=100..200, >100MHz |
|
| DM | - | 2SB798-M | Nec | SOT-89 | 20tb | Silicon PNP Transistor AF-Amp, 30V, 1A, 2W, 110MHz, B=200..400 |
|
| DM | - | 2SD1998 | San | PCP | 20tb | Silicon NPN Digital Transistor with Internal Diode Motor-Driver, 40V, 3A, 1.5W, B>70, 100MHz, R2=800Ω |
|
| DM | - | 2SD2170 | Rhm | SOT-89 | 20tb | Silicon NPN Darlington Transistor AF, 90V, 2A, 500mW, B=1000..10000, >80MHz |