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| Datasheet | ZXMNS3BM832TA |
| File Size | 125.55 KB |
| Total Pages | 5 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZXMNS3BM832TA |
| Description | MOSFET N-CH 30V 2A 8-MLP |
ZXMNS3BM832TA - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/ZXMNS3BM832TA
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 314pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP, MicroFET (3x2) Package / Case 8-VDFN Exposed Pad |