Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZXMN3A01E6TC |
| File Size | 611.1 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN3A01E6TC, ZXMN3A01E6TA |
| Description | MOSFET N-CH 30V 2.4A SOT23-6, MOSFET N-CH 30V 2.4A SOT-23-6 |
ZXMN3A01E6TC - Diodes Incorporated
The Products You May Be Interested In
 |
ZXMN3A01E6TC | Diodes Incorporated | MOSFET N-CH 30V 2.4A SOT23-6 | 182 More on Order |
 |
ZXMN3A01E6TA | Diodes Incorporated | MOSFET N-CH 30V 2.4A SOT-23-6 | 47861 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-6 Package / Case SOT-23-6 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-6 Package / Case SOT-23-6 |