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| Datasheet | ZXMN2F30FHQTA |
| File Size | 498.18 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZXMN2F30FHQTA |
| Description | MOSFET N-CH 20V 4.9A SOT23-3 |
ZXMN2F30FHQTA - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/ZXMN2F30FHQTA
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 45mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 452pF @ 10V FET Feature - Power Dissipation (Max) 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |