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| Datasheet | ZXMHC10A07N8TC |
| File Size | 721.89 KB |
| Total Pages | 11 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZXMHC10A07N8TC |
| Description | MOSFET 2N/2P-CH 100V 8-SOIC |
ZXMHC10A07N8TC - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/ZXMHC10A07N8TC
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Manufacturer Diodes Incorporated Series - FET Type 2 N and 2 P-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 800mA, 680mA Rds On (Max) @ Id, Vgs 700mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 138pF @ 60V Power - Max 870mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |