Datasheet | ZXMC3F31DN8TA |
File Size | 326.21 KB |
Total Pages | 11 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | ZXMC3F31DN8TA |
Description | MOSFET N/P-CH 30V 6.8A/4.9A 8SO |
ZXMC3F31DN8TA - Diodes Incorporated
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ZXMC3F31DN8TA | Diodes Incorporated | MOSFET N/P-CH 30V 6.8A/4.9A 8SO | 1386 More on Order |
URL Link
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.8A, 4.9A Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |