Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZVN4306ASTZ |
| File Size | 361.41 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | ZVN4306ASTZ, ZVN4306ASTOB, ZVN4306ASTOA, ZVN4306A |
| Description | MOSFET N-CH 60V 1.1A TO92-3, MOSFET N-CH 60V 1.1A TO92-3, MOSFET N-CH 60V 1.1A TO92-3, MOSFET N-CH 60V 1.1A TO92-3 |
ZVN4306ASTZ - Diodes Incorporated
The Products You May Be Interested In
 |
ZVN4306ASTZ | Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | 198 More on Order |
 |
ZVN4306ASTOB | Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | 144 More on Order |
 |
ZVN4306ASTOA | Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | 385 More on Order |
 |
ZVN4306A | Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | 5132 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |