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| Datasheet | VS-GT200TP065N |
| File Size | 140.7 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-GT200TP065N |
| Description | IGBT |
VS-GT200TP065N - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/VS-GT200TP065N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 221A Power - Max 600W Vce(on) (Max) @ Vge, Ic 2.12V @ 15V, 200A Current - Collector Cutoff (Max) 60µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |