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| Datasheet | VS-GB100TH120U |
| File Size | 130.18 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-GB100TH120U |
| Description | IGBT 1200V 200A 1136W INT-A-PAK |
VS-GB100TH120U - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/VS-GB100TH120U
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 200A Power - Max 1136W Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 100A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 8.45nF @ 20V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 4) Supplier Device Package Double INT-A-PAK |