Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-ETF150Y65U |
| File Size | 465.22 KB |
| Total Pages | 15 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-ETF150Y65U |
| Description | IGBT 650V 150A EMIPAK-2B |
VS-ETF150Y65U - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | 285 More on Order |
URL Link
www.oemstron.com/datasheet/VS-ETF150Y65U
|
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Three Level Inverter Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 142A Power - Max 417W Vce(on) (Max) @ Vge, Ic 2.06V @ 15V, 100A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce 6.6nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case EMIPAK-2B Supplier Device Package EMIPAK-2B |