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VS-4ESH01HM3/87A Datasheet

VS-4ESH01HM3/87A Cover
DatasheetVS-4ESH01HM3/87A
File Size129.51 KB
Total Pages7
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-4ESH01HM3/87A, VS-4ESH01HM3/86A
Description DIODE GEN PURP 100V 4A TO277A, DIODE GEN PURP 100V 4A TO277A

VS-4ESH01HM3/87A - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

VS-4ESH01HM3/87A VS-4ESH01HM3/87A Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A 170

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VS-4ESH01HM3/86A VS-4ESH01HM3/86A Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A 2511

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URL Link

VS-4ESH01HM3/87A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

4A

Voltage - Forward (Vf) (Max) @ If

930mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

25ns

Current - Reverse Leakage @ Vr

2µA @ 4V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-65°C ~ 175°C

VS-4ESH01HM3/86A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

4A

Voltage - Forward (Vf) (Max) @ If

930mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

20ns

Current - Reverse Leakage @ Vr

2µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-65°C ~ 175°C