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VS-20ETS16PBF Datasheet

VS-20ETS16PBF Cover
DatasheetVS-20ETS16PBF
File Size157.13 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-20ETS16PBF, VS-20ETS16-M3
Description DIODE GEN PURP 1.6KV 20A TO220AB, DIODE GEN PURP 1.6KV 20A TO220AB

VS-20ETS16PBF - Vishay Semiconductor Diodes Division

VS-20ETS16PBF Datasheet Page 1
VS-20ETS16PBF Datasheet Page 2
VS-20ETS16PBF Datasheet Page 3
VS-20ETS16PBF Datasheet Page 4
VS-20ETS16PBF Datasheet Page 5
VS-20ETS16PBF Datasheet Page 6

The Products You May Be Interested In

VS-20ETS16PBF VS-20ETS16PBF Vishay Semiconductor Diodes Division DIODE GEN PURP 1.6KV 20A TO220AB 397

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VS-20ETS16-M3 VS-20ETS16-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.6KV 20A TO220AB 475

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URL Link

VS-20ETS16PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1600V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 20A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 1600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-40°C ~ 150°C

VS-20ETS16-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1600V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 20A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 1600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-40°C ~ 150°C