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VS-10ETS08-M3 Datasheet

VS-10ETS08-M3 Cover
DatasheetVS-10ETS08-M3
File Size164.04 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-10ETS08-M3, VS-10ETS12-M3
Description DIODE GEN PURP 800V 10A TO220AC, DIODE GEN PURP 1.2KV 10A TO220AC

VS-10ETS08-M3 - Vishay Semiconductor Diodes Division

VS-10ETS08-M3 Datasheet Page 1
VS-10ETS08-M3 Datasheet Page 2
VS-10ETS08-M3 Datasheet Page 3
VS-10ETS08-M3 Datasheet Page 4
VS-10ETS08-M3 Datasheet Page 5
VS-10ETS08-M3 Datasheet Page 6

The Products You May Be Interested In

VS-10ETS08-M3 VS-10ETS08-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 10A TO220AC 264

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VS-10ETS12-M3 VS-10ETS12-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220AC 141

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URL Link

VS-10ETS08-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

50µA @ 800V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

VS-10ETS12-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 10A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

50µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C