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VN2410LZL1G Datasheet

VN2410LZL1G Cover
DatasheetVN2410LZL1G
File Size56.28 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts VN2410LZL1G, VN2410LG
Description MOSFET N-CH 240V 200MA TO-92, MOSFET N-CH 240V 200MA TO-92

VN2410LZL1G - ON Semiconductor

VN2410LZL1G Datasheet Page 1
VN2410LZL1G Datasheet Page 2
VN2410LZL1G Datasheet Page 3
VN2410LZL1G Datasheet Page 4

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URL Link

VN2410LZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

10Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

VN2410LG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

10Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)