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VMO550-01F Datasheet

VMO550-01F Cover
DatasheetVMO550-01F
File Size46.68 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VMO550-01F
Description MOSFET N-CH 100V 590A Y3-DCB

VMO550-01F - IXYS

VMO550-01F Datasheet Page 1
VMO550-01F Datasheet Page 2

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URL Link

VMO550-01F

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

590A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

6V @ 110mA

Gate Charge (Qg) (Max) @ Vgs

2000nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50000pF @ 25V

FET Feature

-

Power Dissipation (Max)

2200W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Y3-DCB

Package / Case

Y3-DCB