Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

UPA2821T1L-E1-AT Datasheet

UPA2821T1L-E1-AT Cover
DatasheetUPA2821T1L-E1-AT
File Size144.63 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts UPA2821T1L-E1-AT
Description MOSFET N-CH 30V 26A 8HVSON

UPA2821T1L-E1-AT - Renesas Electronics America

UPA2821T1L-E1-AT Datasheet Page 1
UPA2821T1L-E1-AT Datasheet Page 2
UPA2821T1L-E1-AT Datasheet Page 3
UPA2821T1L-E1-AT Datasheet Page 4
UPA2821T1L-E1-AT Datasheet Page 5
UPA2821T1L-E1-AT Datasheet Page 6
UPA2821T1L-E1-AT Datasheet Page 7
UPA2821T1L-E1-AT Datasheet Page 8

The Products You May Be Interested In

UPA2821T1L-E1-AT UPA2821T1L-E1-AT Renesas Electronics America MOSFET N-CH 30V 26A 8HVSON 367

More on Order

URL Link

UPA2821T1L-E1-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2490pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HWSON (3.3x3.3)

Package / Case

8-PowerWDFN