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| Datasheet | UPA2766T1A-E1-AY |
| File Size | 143.38 KB |
| Total Pages | 7 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | UPA2766T1A-E1-AY, UPA2766T1A-E2-AY |
| Description | MOSFET N-CH 30V 130A 8SON, MOSFET N-CH 30V 130A 8HVSON |
UPA2766T1A-E1-AY - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 130A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.82mOhm @ 39A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 257nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10850pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 83W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (5.4x5.15) Package / Case 8-PowerVDFN |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.82mOhm @ 39A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 257nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10850pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 83W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (5.4x5.15) Package / Case 8-PowerVDFN |