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| Datasheet | TSM4NB60CZ C0G |
| File Size | 1,324.59 KB |
| Total Pages | 12 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TSM4NB60CZ C0G |
| Description | MOSFET N-CHANNEL 600V 4A TO220 |
TSM4NB60CZ C0G - Taiwan Semiconductor Corporation
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URL Link
www.oemstron.com/datasheet/TSM4NB60CZ C0G
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |