Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

TPCA8011-H(TE12LQM Datasheet

TPCA8011-H(TE12LQM Cover
DatasheetTPCA8011-H(TE12LQM
File Size178.15 KB
Total Pages7
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts TPCA8011-H(TE12LQM
Description MOSFET N-CH 20V 40A SOP-8 ADV

TPCA8011-H(TE12LQM - Toshiba Semiconductor and Storage

TPCA8011-H(TE12LQM Datasheet Page 1
TPCA8011-H(TE12LQM Datasheet Page 2
TPCA8011-H(TE12LQM Datasheet Page 3
TPCA8011-H(TE12LQM Datasheet Page 4
TPCA8011-H(TE12LQM Datasheet Page 5
TPCA8011-H(TE12LQM Datasheet Page 6
TPCA8011-H(TE12LQM Datasheet Page 7

The Products You May Be Interested In

TPCA8011-H(TE12LQM TPCA8011-H(TE12LQM Toshiba Semiconductor and Storage MOSFET N-CH 20V 40A SOP-8 ADV 124

More on Order

URL Link

TPCA8011-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN