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TPC8207(TE12L Datasheet

TPC8207(TE12L,Q) Cover
DatasheetTPC8207(TE12L,Q)
File Size187.79 KB
Total Pages7
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 2 part numbers
Associated Parts TPC8207(TE12L,Q), TPC8207(TE12L)
Description MOSFET 2N-CH 20V 6A 8-SOP, MOSFET 2N-CH 20V 6A 8-SOP

TPC8207(TE12L,Q) - Toshiba Semiconductor and Storage

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URL Link

TPC8207(TE12L,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

20mOhm @ 4.8A, 4V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

2010pF @ 10V

Power - Max

450mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP (5.5x6.0)

TPC8207(TE12L)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

20mOhm @ 4.8A, 4V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

2010pF @ 10V

Power - Max

450mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP (5.5x6.0)