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| Datasheet | TPC8111(TE12L,Q,M) |
| File Size | 245.5 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TPC8111(TE12L,Q,M) |
| Description | MOSFET P-CH 30V 11A SOP8 2-6J1B |
TPC8111(TE12L,Q,M) - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/TPC8111(TE12L,Q,M)
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5710pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP (5.5x6.0) Package / Case 8-SOIC (0.173", 4.40mm Width) |