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TP65H035WSQA Datasheet

TP65H035WSQA Cover
DatasheetTP65H035WSQA
File Size953.59 KB
Total Pages12
ManufacturerTransphorm
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts TP65H035WSQA
Description GANFET N-CH 650V 47A TO247-3

TP65H035WSQA - Transphorm

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URL Link

TP65H035WSQA

Transphorm

Manufacturer

Transphorm

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

47.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 400V

FET Feature

-

Power Dissipation (Max)

187W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3