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TH58BVG2S3HBAI4 Datasheet

TH58BVG2S3HBAI4 Cover
DatasheetTH58BVG2S3HBAI4
File Size1,243.01 KB
Total Pages51
ManufacturerToshiba Memory America, Inc.
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts TH58BVG2S3HBAI4
Description 4GB SLC BENAND 24NM BGA 9X11 (EE

TH58BVG2S3HBAI4 - Toshiba Memory America, Inc.

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TH58BVG2S3HBAI4 TH58BVG2S3HBAI4 Toshiba Memory America, Inc. 4GB SLC BENAND 24NM BGA 9X11 (EE 414

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URL Link

TH58BVG2S3HBAI4

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

Benand™

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

4Gb (512M x 8)

Memory Interface

-

Clock Frequency

-

Write Cycle Time - Word, Page

25ns

Access Time

-

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

63-VFBGA

Supplier Device Package

63-TFBGA (9x11)