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TC58CYG0S3HQAIE Datasheet

TC58CYG0S3HQAIE Cover
DatasheetTC58CYG0S3HQAIE
File Size2,106.82 KB
Total Pages42
ManufacturerToshiba Memory America, Inc.
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts TC58CYG0S3HQAIE, TC58CYG0S3HRAIG
Description IC FLASH 1G SPI 104MHZ 16SOP, 1GB SERIAL NAND 24NM WSON 1.8V

TC58CYG0S3HQAIE - Toshiba Memory America, Inc.

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URL Link

TC58CYG0S3HQAIE

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

1Gb (128M x 8)

Memory Interface

SPI

Clock Frequency

104MHz

Write Cycle Time - Word, Page

-

Access Time

155µs

Voltage - Supply

1.7V ~ 1.95V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.295", 7.50mm Width)

Supplier Device Package

16-SOP

TC58CYG0S3HRAIG

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

2Gb (256M x 8)

Memory Interface

SPI

Clock Frequency

104MHz

Write Cycle Time - Word, Page

-

Access Time

-

Voltage - Supply

1.7V ~ 1.95V

Operating Temperature

-40°C ~ 85°C

Mounting Type

Surface Mount

Package / Case

8-WDFN Exposed Pad

Supplier Device Package

8-WSON (6x8)