Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SUD50N10-18P-E3 |
| File Size | 117.93 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SUD50N10-18P-E3 |
| Description | MOSFET N-CH 100V 8.2A TO252 |
SUD50N10-18P-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SUD50N10-18P-E3 | Vishay Siliconix | MOSFET N-CH 100V 8.2A TO252 | 335 More on Order |
URL Link
www.oemstron.com/datasheet/SUD50N10-18P-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 136.4W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |